OPB841W51Z
Output Configuration | Phototransistor |
Current - Collector (Ic) (Max) | 30 mA |
Current - DC Forward (If) (Max) | 50 mA |
Voltage - Collector Emitter Breakdown (Max) | 30 V |
Sensing Method | Through-Beam |
Sensing Distance | 0.125" (3.18mm) |
Operating Temperature | -40°C ~ 80°C |
Package / Case | Module, Pre-Wired |
Mounting Type | Chassis Mount |
Response Time | - |
Product Status | Active |
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