CEA LETI will publish two papers on its MicroLED technology progress on Photonics West 2024. The content is to make LED matrices with higher data rate density and strategies to lose their efficiency loss in small dimensions.

In parallel communication with the "CMOS compatibility method with Ingan/GAN miniature LED", the LED is produced directly on the 200mm silicon -based board to produce a few micron LED matrix controlled by a special CMOS circuit alone.(On January 31st, 9: 00-9: 20 in the Pacific Standard Time, Moscow Center, Room 2002 West 2nd Floor)

Ingan/GAN micro -LED is a powerful candidate to achieve high data rate optical communication, because they have the ability to rob, large -scale availability, and reaching GHz -level bandwidth.Using them in the array can achieve large -scale parallel transmission, thereby achieving high data rate density.A CEA Leti patent process that integrates Gan LED matrix on CMOS ASIC has also developed.In this CMOS compatibility method, by combining MicroLED directly on 200mm silicon wafers and using GAN base components as transmitters and fast photoelectric detectors, it optimizes it.

The main author of the paper, Anthony Cibié, said: "In order to solve the communication application, we use high -frequency adjustment LED to achieve high data rates." "Our goal is to use a LED array to light up and use a photoelectric diode made from GAN.The array is detected. We know how to create thousands of pixel array, so we can have thousands of parallel communication channels. "

Improve efficiency

Previous work shows that the efficiency of miniature LEDs decreases with the range of its size from millimeter to micron, because the number of loads that diffuse and reorganize non -radiation at the flawed side wall increases.Therefore, the diffusion length of non -radiation centers and minimized carriers seems to be the key to the production of high -efficiency miniature LEDs.

For this reason, CEA-LETI has been focusing on improving the efficiency of MicroLED for many years, especially by paying attention to defect passivation first, and recently understanding the influence of load proliferation, this is the theme of the second paper.

The paper entitled "The effects of the thickness of the quantum trap on sapphire, independent GAN, and SI, which emphasizes the influence of the load diffusion length in the load diffusion" of the Ingan quantum trap ", emphasizes the efficiency of Ingan/Gan LED through understanding and controlling carrier diffusion.The strategy of falling.(On January 30, the Pacific Standard time 9: 20-9: 40 am, Moscow Internal Center, Room 2024 (West 2).

The main author of the paper Simon Litschgi said: "In this paper, we show that as theoretical prediction, we can reduce the diffusion length by reducing the thickness of the Ingan quantum trap. In addition, we also proposed that in a large number of subtained trapsObserved and unexpectedly diffused behaviors, which may help us understand the physical characteristics of the transmitter. "

LITSCHGI pointed out that these phenomena are studied on several types of lining including silicon.This paved the way for the manufacture of more efficient GAN micro -LED devices on 200 mm and 300 mm silicon chips. This is the most cost -effective industrial solution for displaying and communication applications.

Laurent Fulbert, deputy head of the CEA Leti optical and photon department, said: "As the leader of MicroLED technology, CEA Leti has been focusing on developing cutting -edge display and optical communication systems for a long time to meet the needs of our business partners and help them shape their institutionsThe service market. "" These two projects are directly related to the interests of our partners. "